WSD75N12GDN56 N-ọwa 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET nchịkọta ngwaahịa
Voltage nke WSD75N12GDN56 MOSFET bụ 120V, nke ugbu a bụ 75A, nguzogide bụ 6mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.
Mpaghara ngwa WINSOK MOSFET
Ngwa ahụike MOSFET, drones MOSFET, PD ike na-enye MOSFET, ọkụ ọkụ ọkụ MOSFET, akụrụngwa ụlọ ọrụ MOSFET.
Oghere ngwa MOSFETWINSOK MOSFET dabara na ọnụọgụ ihe onwunwe ndị ọzọ
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
| Akara | Oke | Ogo | Nkeji |
| VDSS | Mgbapu-na-Isi Iyi Voltaji | 120 | V |
| VGS | Voltaji ọnụ ụzọ-na-Isi iyi | ±20 | V |
| ID | 1 Mmiri na-aga n'ihu ugbu a (Tc=25℃) | 75 | A |
| ID | 1 Mmiri na-aga n'ihu ugbu a (Tc=70℃) | 70 | A |
| IDM | Mgbapu Pulsed Ugbu a | 320 | A |
| IAR | Otu pulse oke oke mmiri dị ugbu a | 40 | A |
| EASA | Otu usu usu oke oke ume ike | 240 | mJ |
| PD | Mgbasa ike | 125 | W |
| TJ, Tstg | Njikọ na-arụ ọrụ yana oke okpomọkụ nchekwa | -55 ruo 150 | ℃ |
| TL | Okpomọkụ kachasị maka ire ere | 260 | ℃ |
| RθJC | Nguzogide okpomọkụ, Njikọ-na-Ikpe | 1.0 | ℃/W |
| RỊJA | Nguzogide okpomọkụ, Njikọ-na-Ambient | 50 | ℃/W |
| Akara | Oke | Ọnọdụ ule | Min. | Ụdị. | Oke. | Nkeji |
| VDSS | Wepu Voltage nbibi ruo isi iyi | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Mkpọpu gaa na isi iyi na-agbapụta ugbu a | VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
| IGSS(F) | Ọnụ ụzọ ámá gaa n'isi iyi na-agbapụta n'ihu | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Ọnụ ụzọ ámá gaa na Isi iyi Reverse Leakage | VGS = -20V | -- | -- | -100 | nA |
| VGS(TH) | Voltaji ọnụ ụzọ ámá | VDS=VGS, NJ = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Mgbapu-na-Isi iyi Na-eguzogide | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Transconductance na-aga n'ihu | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Ntinye ike | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Kọs | Mmepụta Capacitance | -- | 429 | -- | pF | |
| Crss | Ntughari ikike ikike | -- | 17 | -- | pF | |
| Rg | Mgbochi ọnụ ụzọ ámá | -- | 2.5 | -- | Ω | |
| td (ON) | Agbanye oge igbu oge | NJ = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Oge Bilie | -- | 11 | -- | ns | |
| td (gbanyụọ) | Gbanyụọ oge igbu oge | -- | 55 | -- | ns | |
| tf | Oge ọdịda | -- | 28 | -- | ns | |
| Qg | Mkpokọta ụgwọ ọnụ ụzọ ámá | VGS = 0 ~ 10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Ụgwọ Isi iyi Gate | -- | 17.4 | -- | nC | |
| Qgd | Ụgwọ ịgbapu ọnụ ụzọ ámá | -- | 14.1 | -- | nC | |
| IS | Diode aga n'ihu ugbu a | TC = 25 Celsius | -- | -- | 100 | A |
| ISM | Diode Pulse dị ugbu a | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Weghachite oge mgbake | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Weghachite ụgwọ mgbake | -- | 250 | -- | nC |
