WSD75100DN56 N-ọwa 75V 100A DFN5X6-8 WINSOK MOSFET

ngwaahịa

WSD75100DN56 N-ọwa 75V 100A DFN5X6-8 WINSOK MOSFET

nkowa nkenke:

Nọmba akụkụ:WSD75100DN56

BVDSS:75V

NJ:100A

RDSON:5.3mΩ 

Ọwa:N-ọwa

ngwugwu:DFN5X6-8


Nkọwa ngwaahịa

Ngwa

Mkpado ngwaahịa

WINSOK MOSFET nchịkọta ngwaahịa

Voltage nke WSD75100DN56 MOSFET bụ 75V, nke ugbu a bụ 100A, nguzogide bụ 5.3mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.

Mpaghara ngwa WINSOK MOSFET

E-cigare MOSFET, ikuku chaja MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, MOSFET njikwa, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, ngwa eletrọnịkị MOSFET.

WINSOK MOSFET dabara na ọnụọgụ ihe eji eme ihe ndị ọzọ

AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3TE7BNS POSFET6H824N. .

MOSFET parameters

Akara

Oke

Ogo

Nkeji

VDS

Mgbapu-Isi iyi voltaji

75

V

VGS

Ọnụ ụzọ ámá-Sournke Voltage

±25

V

TJ

Okpomọkụ Njikọ kacha

150

Celsius C

ID

Oke Okpomọkụ Nchekwa

-55 ruo 150

Celsius C

IS

Diode na-aga n'ihu ugbu a,TC=25°C

50

A

ID

Mmiri na-aga n'ihu ugbu a, VGS= 10V,TC=25°C

100

A

Mmiri na-aga n'ihu ugbu a, VGS= 10V,TC=100°C

73

A

IDM

Mkpọpu Pulsed Ugbu a,TC=25°C

400

A

PD

Mwepu ike kacha,TC=25°C

155

W

Mwepu ike kacha,TC=100°C

62

W

RJA

Mgbochi okpomọkụ-Nkwekọrịta na Ambient ,t =10s ̀

20

Celsius C

Thermal Resistance-Junction to Ambient, Steady State

60

Celsius C

RqJC

Mgbochi okpomọkụ-Nkwụsị maka ikpe

0.8

Celsius C

IAS

Avalanche dị ugbu a, otu usu, L=0.5mH

30

A

EAS

Avalanche Energy, Single pulse,L=0.5mH

225

mJ

 

Akara

Oke

Ọnọdụ

Min.

Ụdị.

Oke.

Nkeji

BVDSS

Mgbapu-Isi iyi Voltaji ndakpọ VGS= 0V, ID= 250 uA

75

---

---

V

BVDSS/△TJ

BVDSSỌnụego okpomọkụ Ntụaka na 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Isi Iyi Na-eguzogide2 VGS=10V, ID= 25A

---

5.3

6.4

mΩ

VGS(nke)

Voltaji ọnụ ụzọ ámá VGS=VDS, ID= 250 uA

2.0

3.0

4.0

V

VGS(nke)

VGS(nke)Ọnụego okpomọkụ

---

-6.94

---

mV/

IDSS

Mgbapu-Isi iyi ugbu a VDS= 48V, VGS= 0V, TJ=25

---

---

2

uA

VDS= 48V, VGS= 0V, TJ=55

---

---

10

IGSS

Ọnụ ụzọ-isi iyi dị ugbu a VGS=±20V, VDS= 0V

---

---

±100

nA

gfs

Transconductance na-aga n'ihu VDS= 5V, ID= 20A

---

50

---

S

Rg

Mgbochi ọnụ ụzọ ámá VDS= 0V, VGS=0V , f=1Mhz

---

1.0

2

Ω

Qg

Mkpokọta ụgwọ ọnụ ụzọ ámá (10V) VDS= 20V, VGS= 10V, ID= 40A

---

65

85

nC

Qgs

Ọnụ ụzọ ámá-isi iyi

---

20

---

Qgd

Ụgwọ ọnụ ụzọ ámá-mmiri

---

17

---

Td (na)

Agbanye oge igbu oge VDD= 30V, VGEN= 10V, RG=1Ω, ID=1A ,RL=15Ω.

---

27

49

ns

Tr

Oge Bilie

---

14

26

Td (gbanyụọ)

Gbanyụọ oge igbu oge

---

60

108

Tf

Oge ọdịda

---

37

67

Ciss

Ntinye ike VDS= 20V, VGS=0V , f=1Mhz

3450

3500 4550

pF

Kọs

Mmepụta Capacitance

245

395

652

Crss

Ntughari ikike ikike

100

195

250


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