WSD60N10GDN56 N-ọwa 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET nchịkọta ngwaahịa
Voltage nke WSD60N10GDN56 MOSFET bụ 100V, nke ugbu a bụ 60A, nguzogide bụ 8.5mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.
Mpaghara ngwa WINSOK MOSFET
E-cigare MOSFET, chaja ikuku MOSFET, moto MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, ndị na-ahụ maka MOSFET, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, igwe eletrọnịkị MOSFET.
Oghere ngwa MOSFETWINSOK MOSFET dabara na ọnụọgụ ihe onwunwe ndị ọzọ
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINETON31 MOSFET ,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parameters
| Akara | Oke | Ogo | Nkeji |
| VDS | Mgbapu-Isi iyi voltaji | 100 | V |
| VGS | Voltage Ọnụ ụzọ-Isi iyi | ±20 | V |
| ID@TC= 25 ℃ | Mmiri na-aga n'ihu ugbu a | 60 | A |
| IDP | Mgbapu Pulsed Ugbu a | 210 | A |
| EAS | Avalanche Energy, otu usu | 100 | mJ |
| PD@TC= 25 ℃ | Mkpokọta mwepu ike | 125 | W |
| TSTG | Oke Okpomọkụ Nchekwa | -55 ruo 150 | ℃ |
| TJ | Oke Ọnọdụ okpomọkụ na-arụ ọrụ | -55 ruo 150 | ℃ |
| Akara | Oke | Ọnọdụ | Min. | Ụdị. | Oke. | Nkeji |
| BVDSS | Mgbapu-Isi iyi Voltaji ndakpọ | VGS= 0V, ID= 250 uA | 100 | --- | --- | V |
| Static Drain-Isi Iyi Na-eguzogide | VGS=10V,ID=10A. | --- | 8.5 | 10.0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12.0 | mΩ | |
| VGS(nke) | Voltaji ọnụ ụzọ ámá | VGS=VDS, ID= 250 uA | 1.0 | --- | 2.5 | V |
| IDSS | Mgbapu-Isi iyi ugbu a | VDS= 80V, VGS= 0V, TJ= 25 ℃ | --- | --- | 1 | uA |
| IGSS | Ọnụ ụzọ-isi iyi dị ugbu a | VGS= ± 20V, VDS= 0V | --- | --- | ±100 | nA |
| Qg | Mkpokọta ụgwọ ọnụ ụzọ ámá (10V) | VDS= 50V, VGS= 10V, ID= 25A | --- | 49.9 | --- | nC |
| Qgs | Ọnụ ụzọ ámá-isi iyi | --- | 6.5 | --- | ||
| Qgd | Ụgwọ ọnụ ụzọ ámá-mmiri | --- | 12.4 | --- | ||
| Td (na) | Agbanye oge igbu oge | VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A | --- | 20.6 | --- | ns |
| Tr | Oge Bilie | --- | 5 | --- | ||
| Td (gbanyụọ) | Gbanyụọ oge igbu oge | --- | 51.8 | --- | ||
| Tf | Oge ọdịda | --- | 9 | --- | ||
| Ciss | Ntinye ike | VDS= 50V, VGS=0V , f=1Mhz | --- | 2604 | --- | pF |
| Kọs | Mmepụta Capacitance | --- | 362 | --- | ||
| Crss | Ntughari ikike ikike | --- | 6.5 | --- | ||
| IS | Isi mmalite na-aga n'ihu ugbu a | VG=VD= 0V , Ike dị ugbu a | --- | --- | 60 | A |
| ISP | Isi mmalite Pulsed Ugbu a | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS= 0V, IS= 12A, TJ= 25 ℃ | --- | --- | 1.3 | V |
| trr | Weghachite oge mgbake | Ọ BỤRỤ = 12A, dI/dt=100A/µs,TJ= 25 ℃ | --- | 60.4 | --- | nS |
| Qrr | Weghachite ụgwọ mgbake | --- | 106.1 | --- | nC |
