WSD60N10GDN56 N-ọwa 100V 60A DFN5X6-8 WINSOK MOSFET

ngwaahịa

WSD60N10GDN56 N-ọwa 100V 60A DFN5X6-8 WINSOK MOSFET

nkowa nkenke:

Nọmba akụkụ:WSD60N10GDN56

BVDSS:100V

NJ:60A

RDSON:8.5mΩ

Ọwa:N-ọwa

ngwugwu:DFN5X6-8


Nkọwa ngwaahịa

Ngwa

Mkpado ngwaahịa

WINSOK MOSFET nchịkọta ngwaahịa

Voltage nke WSD60N10GDN56 MOSFET bụ 100V, nke ugbu a bụ 60A, nguzogide bụ 8.5mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.

Mpaghara ngwa WINSOK MOSFET

E-cigare MOSFET, chaja ikuku MOSFET, moto MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, ndị na-ahụ maka MOSFET, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, igwe eletrọnịkị MOSFET.

Oghere ngwa MOSFETWINSOK MOSFET dabara na ọnụọgụ ihe onwunwe ndị ọzọ

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINETON31 MOSFET MOSFET. TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.

MOSFET parameters

Akara

Oke

Ogo

Nkeji

VDS

Mgbapu-Isi iyi voltaji

100

V

VGS

Voltage Ọnụ ụzọ-Isi iyi

±20

V

ID@TC= 25 ℃

Mgbapu na-aga n'ihu ugbu a

60

A

IDP

Mgbapu Pulsed Ugbu a

210

A

EAS

Avalanche Energy, otu usu

100

mJ

PD@TC= 25 ℃

Mkpokọta mwepu ike

125

W

TSTG

Oke Okpomọkụ Nchekwa

-55 ruo 150

TJ 

Oke Ọnọdụ okpomọkụ na-arụ ọrụ

-55 ruo 150

 

Akara

Oke

Ọnọdụ

Min.

Ụdị.

Oke.

Nkeji

BVDSS 

Mgbapu-Isi iyi Voltaji ndakpọ VGS= 0V, ID= 250 uA

100

---

---

V

  Static Drain-Isi Iyi Na-eguzogide VGS=10V,ID=10A.

---

8.5

10.0

RDS(ON)

VGS=4.5V,ID=10A.

---

9.5

12.0

VGS(nke)

Voltaji ọnụ ụzọ ámá VGS=VDS, ID= 250 uA

1.0

---

2.5

V

IDSS

Mgbapu-Isi iyi ugbu a VDS= 80V, VGS= 0V, TJ= 25 ℃

---

---

1

uA

IGSS

Ọnụ ụzọ-isi iyi dị ugbu a VGS= ± 20V, VDS= 0V

---

---

±100

nA

Qg 

Mkpokọta ụgwọ ọnụ ụzọ ámá (10V) VDS= 50V, VGS= 10V, ID= 25A

---

49.9

---

nC

Qgs 

Ọnụ ụzọ ámá-isi iyi

---

6.5

---

Qgd 

Ụgwọ ọnụ ụzọ ámá-mmiri

---

12.4

---

Td (na)

Agbanye oge igbu oge VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A

---

20.6

---

ns

Tr 

Oge Bilie

---

5

---

Td (gbanyụọ)

Gbanyụọ oge igbu oge

---

51.8

---

Tf 

Oge ọdịda

---

9

---

Ciss 

Ntinye ike VDS= 50V, VGS=0V , f=1Mhz

---

2604

---

pF

Kọs

Mmepụta Capacitance

---

362

---

Crss 

Ntughari ikike ikike

---

6.5

---

IS 

Isi mmalite na-aga n'ihu ugbu a VG=VD= 0V , Ike dị ugbu a

---

---

60

A

ISP

Isi mmalite Pulsed Ugbu a

---

---

210

A

VSD

Diode Forward Voltage VGS= 0V, IS= 12A, TJ= 25 ℃

---

---

1.3

V

trr 

Weghachite oge mgbake Ọ BỤRỤ = 12A, dI/dt=100A/µs,TJ= 25 ℃

---

60.4

---

nS

Qrr 

Weghachite ụgwọ mgbake

---

106.1

---

nC


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