WSD6060DN56 N-ọwa 60V 65A DFN5X6-8 WINSOK MOSFET

ngwaahịa

WSD6060DN56 N-ọwa 60V 65A DFN5X6-8 WINSOK MOSFET

nkowa nkenke:

Nọmba akụkụ:WSD6060DN56

BVDSS:60V

NJ:65A

RDSON:7.5mΩ 

Ọwa:N-ọwa

ngwugwu:DFN5X6-8


Nkọwa ngwaahịa

Ngwa

Mkpado ngwaahịa

WINSOK MOSFET nchịkọta ngwaahịa

Voltage nke WSD6060DN56 MOSFET bụ 60V, nke ugbu a bụ 65A, nguzogide bụ 7.5mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.

Mpaghara ngwa WINSOK MOSFET

E-cigare MOSFET, chaja ikuku MOSFET, moto MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, ndị na-ahụ maka MOSFET, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, igwe eletrọnịkị MOSFET.

WINSOK MOSFET dabara na ọnụọgụ ihe eji eme ihe ndị ọzọ

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Akara

Oke

Ogo

Nkeji
Ntụle nkịtị      

VDSS

Mgbapu-Isi iyi voltaji  

60

V

VGSS

Voltage Ọnụ ụzọ-Isi iyi  

±20

V

TJ

Okpomọkụ Njikọ kacha  

150

Celsius C

TSTG Oke Okpomọkụ Nchekwa  

-55 ruo 150

Celsius C

IS

Diode na-aga n'ihu ugbu a Tc=25°C

30

A

ID

Mgbapu na-aga n'ihu ugbu a Tc=25°C

65

A

Tc=70°C

42

M DM b

A nwalere igbapu Pulse ugbu a Tc=25°C

250

A

PD

Mgbasa ike kacha Tc=25°C

62.5

W

TC=70°C

38

RqJL

Nguzogide okpomọkụ-Nkwekọrịta na-eduga Ọnọdụ kwụ akwụ

2.1

Celsius C/W

RqJA

Mgbochi okpomọkụ-Nkwụsị na Ambient t £ 10s

45

Celsius C/W
Ọnọdụ kwụ akwụb 

50

I AS d

Avalanche dị ugbu a, otu usu L=0.5mH

18

A

E AS d

Avalanche Energy, otu usu L=0.5mH

81

mJ

 

Akara

Oke

Ọnọdụ ule Min. Ụdị. Oke. Nkeji
Njirimara static          

BVDSS

Mgbapu-Isi iyi Voltaji ndakpọ VGS= 0V, IDS=250mA

60

-

-

V

IDSS Ọnụ ụzọ ámá efu voltaji igbapu ugbu a VDS= 48V, VGS= 0V

-

-

1

mA
         
      TJ=85°C

-

-

30

 

VGS(nke)

Voltaji ọnụ ụzọ ámá VDS=VGS, IDS=250mA

1.2

1.5

2.5

V

IGSS

Ọnụ ụzọ ámá dị ugbu a VGS= 20V, VDS= 0V

-

-

±100 nA

R DS (ON) 3

Mgbapu-Isi Iyi Nguzogide Na steeti VGS= 10V, IDS= 20A

-

7.5

10

m W
VGS= 4.5V, IDS= 15 A

-

10

15

Njirimara diode          
V SD Diode Forward Voltage ISD= 1A, VGS= 0V

-

0.75

1.2

V

trr

Weghachite oge mgbake

ISD= 20A, dlSD /dt=100A/µs

-

42

-

ns

Qrr

Weghachite ụgwọ mgbake

-

36

-

nC
Àgwà ndị dị ike3,4          

RG

Mgbochi ọnụ ụzọ ámá VGS= 0V, VDS=0V,F=1Mhz

-

1.5

-

W

Ciss

Ntinye ike VGS= 0V,

VDS= 30V,

F=1.0MHz Ω

-

1340

-

pF

Coss

Mmepụta Capacitance

-

270

-

Crss

Ntughari ikike ikike

-

40

-

td (ON) Agbanye oge igbu oge VDD=30V, IDS=1A,

VGEN=10V, RG=6Ω.

-

15

-

ns

tr

Oge ngbanwe oge

-

6

-

td (gbanyụọ) Gbanyụọ oge igbu oge

-

33

-

tf

Gbanyụọ oge ọdịda

-

30

-

Njirimara ụgwọ ọnụ ụzọ ámá 3,4          

Qg

Mkpokọta ụgwọ ọnụ ụzọ ámá VDS= 30V,

VGS= 4.5V, IDS= 20A

-

13

-

nC

Qg

Mkpokọta ụgwọ ọnụ ụzọ ámá VDS= 30V, VGS= 10V,

IDS= 20A

-

27

-

Qgth

Ụgwọ ọnụ ụzọ ámá

-

4.1

-

Qgs

Ọnụ ụzọ ámá-isi iyi

-

5

-

Qgd

Ụgwọ ọnụ ụzọ ámá-mmiri

-

4.2

-


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