WSD6060DN56 N-ọwa 60V 65A DFN5X6-8 WINSOK MOSFET

nkowa nkenke:

Nọmba akụkụ:WSD6060DN56

BVDSS:60V

NJ:65A

RDSON:7.5mΩ

Ọwa:N-ọwa

ngwugwu:DFN5X6-8

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WINSOK MOSFET nchịkọta ngwaahịa

Voltage nke WSD6060DN56 MOSFET bụ 60V, nke ugbu a bụ 65A, nguzogide bụ 7.5mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.

Mpaghara ngwa WINSOK MOSFET

E-cigare MOSFET, chaja ikuku MOSFET, moto MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, ndị na-ahụ maka MOSFET, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, igwe eletrọnịkị MOSFET.

WINSOK MOSFET dabara na ọnụọgụ ihe eji eme ihe ndị ọzọ

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Akara	Oke		Ogo	Nkeji
Ntụle nkịtị
VDSS	Mgbapu-Isi iyi voltaji		60	V
VGSS	Voltage Ọnụ ụzọ-Isi iyi		±20	V
T_J	Okpomọkụ Njikọ kacha		150	Celsius C
TSTG	Oke Okpomọkụ Nchekwa		-55 ruo 150	Celsius C
I_S	Diode na-aga n'ihu ugbu a	T_c=25°C	30	A
ID	Mmiri na-aga n'ihu ugbu a	T_c=25°C	65	A
ID	Mmiri na-aga n'ihu ugbu a	T_c=70°C	42	A
M DM b	A nwalere igbapu Pulse ugbu a	T_c=25°C	250	A
P_D	Mgbasa ike kacha	T_c=25°C	62.5	W
P_D	Mgbasa ike kacha	T_C=70°C	38	W
R_qJL	Nguzogide okpomọkụ-Nkwekọrịta na-eduga	Ọnọdụ kwụ akwụ	2.1	Celsius C/W
RqJA	Mgbochi okpomọkụ-Nkwụsị na Ambient	t £ 10s	45	Celsius C/W
RqJA	Mgbochi okpomọkụ-Nkwụsị na Ambient	Ọnọdụ kwụ akwụ^b	50	Celsius C/W
I AS^d	Avalanche dị ugbu a, otu usu	L=0.5mH	18	A
E AS d	Avalanche Energy, otu usu	L=0.5mH	81	mJ

Akara	Oke	Ọnọdụ ule		Min.	Ụdị.	Oke.	Nkeji
Njirimara static
BV_DSS	Mgbapu-Isi iyi Voltaji ndakpọ	V_GS= 0V, I_DS=250mA		60	-	-	V
IDSS	Ọnụ ụzọ ámá efu voltaji igbapu ugbu a	V_DS= 48V, V_GS= 0V		-	-	1	mA
IDSS	Ọnụ ụzọ ámá efu voltaji igbapu ugbu a						mA
			T_J=85°C	-	-	30
VGS(nke)	Voltaji ọnụ ụzọ ámá	V_DS=V_GS, I_DS=250mA		1.2	1.5	2.5	V
IGSS	Ọnụ ụzọ ámá dị ugbu a	V_GS= 20V, V_DS= 0V		-	-	±100	nA
R DS (ON) 3	Mgbapu-Isi Iyi Nguzogide Na steeti	V_GS= 10V, I_DS= 20A		-	7.5	10	m W
R DS (ON) 3	Mgbapu-Isi Iyi Nguzogide Na steeti	V_GS= 4.5V, I_DS= 15 A		-	10	15	m W
Njirimara diode
V SD	Diode Forward Voltage	I_SD= 1A, V_GS= 0V		-	0.75	1.2	V
t_rr	Weghachite oge mgbake	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Weghachite ụgwọ mgbake	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Àgwà ndị dị ike^3,4
R_G	Mgbochi ọnụ ụzọ ámá	V_GS= 0V, V_DS=0V,F=1Mhz		-	1.5	-	W
C_iss	Ntinye ike	V_GS= 0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Mmepụta Capacitance			-	270	-
C_rss	Ntughari ikike ikike			-	40	-
td (ON)	Agbanye oge igbu oge	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Oge ngbanwe oge			-	6	-
td (gbanyụọ)	Gbanyụọ oge igbu oge			-	33	-
t_f	Gbanyụọ oge ọdịda			-	30	-
Àgwà ndị Charge ọnụ ụzọ ámá ^3,4
Q_g	Mkpokọta ụgwọ ọnụ ụzọ ámá	V_DS= 30V, V_GS= 4.5V, I_DS= 20A		-	13	-	nC
Q_g	Mkpokọta ụgwọ ọnụ ụzọ ámá	V_DS= 30V, V_GS= 10V, I_DS= 20A		-	27	-
Q_gth	Ụgwọ ọnụ ụzọ ámá			-	4.1	-
Q_gs	Ọnụ ụzọ ámá-isi iyi			-	5	-
Q_gd	Ụgwọ ọnụ ụzọ ámá-mmiri			-	4.2	-