WSD6040DN56 N-ọwa 60V 36A DFN5X6-8 WINSOK MOSFET

ngwaahịa

WSD6040DN56 N-ọwa 60V 36A DFN5X6-8 WINSOK MOSFET

nkowa nkenke:

Nọmba akụkụ:WSD6040DN56

BVDSS:60V

NJ:36A

RDSON:14mΩ 

Ọwa:N-ọwa

ngwugwu:DFN5X6-8


Nkọwa ngwaahịa

Ngwa

Mkpado ngwaahịa

WINSOK MOSFET nchịkọta ngwaahịa

Voltage nke WSD6040DN56 MOSFET bụ 60V, nke ugbu a bụ 36A, nguzogide bụ 14mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.

Mpaghara ngwa WINSOK MOSFET

E-cigare MOSFET, chaja ikuku MOSFET, moto MOSFET, drones MOSFET, nlekọta ahụike MOSFET, chaja ụgbọ ala MOSFET, ndị na-ahụ maka MOSFET, ngwaahịa dijitalụ MOSFET, obere ngwa ụlọ MOSFET, igwe eletrọnịkị MOSFET.

WINSOK MOSFET dabara na ọnụọgụ ihe eji eme ihe ndị ọzọ

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.

MOSFET parameters

Akara

Oke

Ogo

Nkeji

VDS

Mgbapu-Isi iyi voltaji

60

V

VGS

Voltage Ọnụ ụzọ-Isi iyi

±20

V

ID

Mgbapu na-aga n'ihu ugbu a TC=25°C

36

A

TC=100°C

22

ID

Mgbapu na-aga n'ihu ugbu a TA=25°C

8.4

A

TA=100°C

6.8

IDMa

Mgbapu Pulsed Ugbu a TC=25°C

140

A

PD

Mgbasa ike kacha TC=25°C

37.8

W

TC=100°C

15.1

PD

Mgbasa ike kacha TA=25°C

2.08

W

TA=70°C

1.33

IAS c

Avalanche dị ugbu a, otu usu

L=0.5mH

16

A

EASc

Otu Pulse Avalanche Energy

L=0.5mH

64

mJ

IS

Diode na-aga n'ihu ugbu a

TC=25°C

18

A

TJ

Okpomọkụ Njikọ kacha

150

TSTG

Oke Okpomọkụ Nchekwa

-55 ruo 150

RJAb

Njikọ Nguzogide Thermal na ambient

Ọnọdụ kwụ akwụ

60

/W

RθJC

Mgbochi okpomọkụ-Nkwụsị maka ikpe

Ọnọdụ kwụ akwụ

3.3

/W

 

Akara

Oke

Ọnọdụ

Min.

Ụdị.

Oke.

Nkeji

Static        

V(BR) DSS

Mgbapu-Isi iyi Voltaji ndakpọ

VGS = 0V, ID = 250μA

60    

V

IDSS

Ọnụ ụzọ ámá efu voltaji igbapu ugbu a

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Ọnụ ụzọ ámá dị ugbu a

VGS = ± 20V, VDS = 0V

    ±100

nA

Na njirimara        

VGS(TH)

Voltaji ọnụ ụzọ ámá

VGS = VDS, IDS = 250µA

1

1.6

2.5

V

RDS(na)d

Mgbapu-Isi Iyi Nguzogide Na steeti

VGS = 10V, ID = 25A

  14 17.5

VGS = 4.5V, ID = 20A

  19

22

Ịgbanwe        

Qg

Mkpokọta ụgwọ ọnụ ụzọ ámá

VDS=30V

VGS=10V

ID=25A

  42  

nC

Qgs

Ọnụ ụzọ ámá-utoojoo Charge  

6.4

 

nC

Qgd

Ụgwọ ọnụ ụzọ ámá-mmiri  

9.6

 

nC

td (na)

Agbanye oge igbu oge

VGEN=10V

VDD=30V

ID=1A

RG=6Ω

RL=30Ω

  17  

ns

tr

Oge ngbanwe oge  

9

 

ns

td (gbanyụọ)

Gbanyụọ oge igbu oge   58  

ns

tf

Gbanyụọ oge ọdịda   14  

ns

Rg

Nguzogide Gat

VGS=0V, VDS=0V,f=1MHz

 

1.5

 

Ω

Dị ike        

Ciss

Na Capacitance

VGS=0V

VDS=30V f=1MHz

 

2100

 

pF

Kọs

Apụghị Capacitance   140  

pF

Crss

Ntughari ikike ikike   100  

pF

Njirimara Diode Drain-Isi iyi yana ogo kacha        

IS

Isi mmalite na-aga n'ihu ugbu a

VG=VD=0V , Force Ugbu a

   

18

A

ISM

Isi mmalite Pulsed Ugbu a3    

35

A

VSDd

Diode Forward Voltage

ISD = 20A, VGS=0V

 

0.8

1.3

V

trr

Weghachite oge mgbake

ISD=25A, dlSD/dt=100A/µs

  27  

ns

Qrr

Weghachite ụgwọ mgbake   33  

nC


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