WSD100N06GDN56 N-ọwa 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET nchịkọta ngwaahịa
Voltage nke WSD100N06GDN56 MOSFET bụ 60V, nke ugbu a bụ 100A, nguzogide bụ 3mΩ, ọwa bụ N-channel, na ngwugwu bụ DFN5X6-8.
Mpaghara ngwa WINSOK MOSFET
Ike ọgwụ na-enye MOSFET, PDs MOSFET, drones MOSFET, sịga eletrọnịkị MOSFET, ngwa MOSFET bụ isi, na ngwaọrụ ike MOSFET.
WINSOK MOSFET dabara na ọnụọgụ ihe eji eme ihe ndị ọzọ
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.
MOSFET parameters
| Akara | Oke | Ogo | Nkeji | ||
| VDS | Mgbapu-Isi iyi voltaji | 60 | V | ||
| VGS | Voltage Ọnụ ụzọ-Isi iyi | ±20 | V | ||
| ID1,6 | Mgbapu na-aga n'ihu ugbu a | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Mgbapu Pulsed Ugbu a | TC=25°C | 240 | A | |
| PD | Mgbasa ike kacha | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche dị ugbu a, otu usu | 45 | A | ||
| EAS3 | Otu Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Okpomọkụ Njikọ kacha | 150 | ℃ | ||
| TSTG | Oke Okpomọkụ Nchekwa | -55 ruo 150 | ℃ | ||
| RJA1 | Njikọ Nguzogide Thermal na ambient | Ọnọdụ kwụ akwụ | 55 | ℃/W | |
| RθJC1 | Mgbochi okpomọkụ-Nkwụsị maka ikpe | Ọnọdụ kwụ akwụ | 1.5 | ℃/W | |
| Akara | Oke | Ọnọdụ | Min. | Ụdị. | Oke. | Nkeji | |
| Static | |||||||
| V(BR) DSS | Mgbapu-Isi iyi Voltaji ndakpọ | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Ọnụ ụzọ ámá efu voltaji igbapu ugbu a | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Ọnụ ụzọ ámá dị ugbu a | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Na njirimara | |||||||
| VGS(TH) | Voltaji ọnụ ụzọ ámá | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(na)2 | Mgbapu-Isi Iyi Nguzogide Na steeti | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ịgbanwe | |||||||
| Qg | Mkpokọta ụgwọ ọnụ ụzọ ámá | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Ọnụ ụzọ ámá-utoojoo Charge | 16 | nC | ||||
| Qgd | Ụgwọ ọnụ ụzọ ámá-mmiri | 4.0 | nC | ||||
| td (na) | Agbanye oge igbu oge | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Oge ngbanwe oge | 8 | ns | ||||
| td (gbanyụọ) | Gbanyụọ oge igbu oge | 50 | ns | ||||
| tf | Gbanyụọ oge ọdịda | 11 | ns | ||||
| Rg | Nguzogide Gat | VGS=0V, VDS=0V,f=1MHz | 0.7 | Ω | |||
| Dị ike | |||||||
| Ciss | Na Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Kọs | Apụghị Capacitance | 1522 | pF | ||||
| Crss | Ntughari ikike ikike | 22 | pF | ||||
| Njirimara Diode Drain-Isi iyi yana ogo kacha | |||||||
| IS1,5 | Isi mmalite na-aga n'ihu ugbu a | VG=VD=0V , Force Ugbu a | 55 | A | |||
| ISM | Isi mmalite Pulsed Ugbu a3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Weghachite oge mgbake | ISD= 20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Weghachite ụgwọ mgbake | 33 | nC | ||||
